The composition material of IGBT
The inverter in uninterruptible power supply (UPS) system is the key component to convert DC to AC, and the IGBT is one of the core components in the inverter. Igbts combine the advantages of MOSFETs and bipolar transistors (BJT) and are widely used in power electronics. The following will describe the composition of IGBT materials.
Semiconductor material
Silicon (Si)
The vast majority of IGBTs are based on silicon, which has good electrical properties and a proven manufacturing process. At present, most IGBTs in industry use monocrystalline silicon as raw material, which has high crystallization quality and interface characteristics.
Gallium nitride (GaN)
Gallium nitride is a third-generation semiconductor material widely used in high-frequency and high-power electronic devices. The electron mobility of GaN is several times that of silicon, which can achieve higher switching frequency and efficiency. GaN has low on-resistance and can maintain excellent conductive characteristics under high pressure, thus reducing energy loss. GaN has a band gap of about 3.4 eV, which is higher voltage resistance compared to silicon's 1.1 eV, making it suitable for high power density applications.
Silicon carbide (SiC)
Silicon carbide is another wide band gap semiconductor material with superior properties. SiC is capable of operating in higher temperature conditions and is suitable for applications in high temperature environments. SiC has a higher thermal conductivity than silicon, which can effectively dissipate heat and improve the overall performance and life of the device. SiC has a high breakdown voltage and is suitable for high voltage and high power applications.
Insulating material
The role of insulation materials in IGBT is mainly to provide electrical insulation, protection and heat dissipation. The choice of insulation material is crucial to the working environment and reliability of IGBTs.
Oxide insulating material
Alumina (Al₂O₃)
Alumina (Al₂O₃) has good electrical insulation and thermal conductivity and is commonly used in IGBTs between the insulation layer and the radiator. Alumina's mechanical strength and heat resistance also make it an excellent insulating material.
Aluminum nitride (AlN)
Aluminum nitride is another high-performance insulating material with very high thermal conductivity, which can effectively reduce the operating temperature of IGBT and improve its reliability.
Polymer insulating material
Polyimide (PI)
Polyimide is a high temperature insulating material with excellent heat resistance, electrical insulation and chemical stability. It is usually used for IGBTs in high temperature environments.
Epoxy
This material is widely used in the packaging and insulation of IGBTs. Epoxy resin has good adhesion and insulation properties, which can effectively protect IGBT in a variety of working environments.
Thermal Interface Materials (TIM)
Thermal Interface Materials (TIM)
The thermal interface material is used between the IGBT chip and the heat sink, which can improve the heat transfer efficiency and reduce the operating temperature. Common thermal interface materials are thermal conductive adhesives and thermal gaskets, which can effectively fill small contact gaps and improve heat dissipation performance.
CONCLUSION
The performance and reliability of IGBTs are largely dependent on their constituent materials. By selecting the right semiconductor and insulating materials, the efficiency and stability of IGBTs in various applications can be improved. With the continuous advancement of power electronics technology, innovation in materials science will further promote the development of IGBTs to support the future application of high-performance power electronic devices.
UPS BATTERY SERIES
UPS (Uninterruptible Power Supply) batteries are an important component of power supply systems designed to provide stable power support for electronic devices.
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